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| 6MBP50TEA120 Econo IPM series Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit 1200V / 50A 6 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Item Bus voltage DC Surge Short operating Symbol VDC VDC(surge) VSC VCES IC ICP -IC PC VCC Vin Iin VALM IALM Tj Topr Tstg Tsol Viso Rating Min. Max. 0 0 400 0 -0.5 -0.5 -0.5 -20 -40 900 1000 800 1200 50 100 50 287 20 Vcc+0.5 3 Vcc 20 150 100 125 260 AC2500 3.5 Unit V V V V A A A W V V mA V mA C C C C V N*m Collector-Emitter voltage *1 Collector current Inverter DC 1ms DC Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Solder temperature *8 Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Mounting (M5) Note *1 : Vces shall be applied to the input voltage between terminal P and U or V or W, N and U or V or W *2 : 125C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.86/(50 x 2.0) x 100>100% *3 : Pc=125C/IGBT Rth(j-c)=125/0.44=287W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. *8 : Immersion time 101sec. 6MBP50TEA120 Electrical characteristics (at Tc=Tj=25C, Vcc=15V unless otherwise specified.) Main circuit Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol ICES VCE(sat) VF ton toff trr Condition VCE=1200V Vin terminal open. Ic=50A Terminal Chip -Ic=50A Terminal Chip VDC=600V,Tj=125C IC=50A Fig.1, Fig.6 VDC=600V, IF=50A Fig.1, Fig.6 Min. 1.2 Typ. 2.2 1.6 - IGBT-IPM Max. 1.0 3.1 2.0 3.6 0.3 Unit mA V V s Turn-on time Turn-off time Reverse recovery time Inverter Control circuit Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Symbol Iccp ICCN Vin(th) VZ tALM Condition Switching Frequency : 0 to 15kHz Tc=-20 to 125C Fig.7 ON OFF Rin=20k ohm Tc=-20C Fig.2 Tc=25C Fig.2 Tc=125C Fig.2 Alarm terminal Min. Typ. Max. Unit mA mA V V V ms ms ms ohm 15 45 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Current limit resistor RALM Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC tDOC tSC TjOH TjH VUV VH Condition Tj=125C Tj=125C Tj=125C Fig.4 Surface of IGBT chips Min. 75 150 11.0 0.2 Typ. 5 20 0.5 Max. 8 12.5 Unit A s s C C V V Thermal characteristics( Tc=25C) Item Junction to Case thermal resistance *9 Case to fin thermal resistance with compound *9 : (For 1 device, Case is under the device) Inverter IGBT FWD Symbol Rth(j-c) Rth(j-c) Rth(c-f) Min. Typ. 0.05 Max. 0.44 0.86 Unit C/W C/W C/W Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1s, polarity ,10minuets Judge : no over-current, no miss operating Rise time 1.2s, Fall time 50s Interval 20s, 10 times Judge : no over-current, no miss operating Min. 2.0 5.0 Typ. Max. Unit kV kV Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Symbol VDC VCC Min. 13.5 2.5 Typ. 15.0 Max. 800 16.5 3.0 Unit V V Nm Weight Item Weight Symbol Wt Min. Typ. 270 Max. Unit g 6MBP50TEA120 Vin Vin(th) On Vin(th) 90% 50% IGBT-IPM trr Ic 90% 10% ton toff Figure 1. Switching Time Waveform Definitions /Vin Vge (Inside IPM ) Fault (Inside IPM ) off on Gate On Gate Off on off normal alarm tALM > Max. 1 tALM > Max. /ALM 2 t ALM 2ms(typ.) 3 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic IALM Ic IALM Ic IALM Figure.4 Definition of tsc Vcc 20 k DC 15V HCPL 4504 P P IPM IPM L + + DC 300V 600V Vin GND VccU DC 15V SW1 20k P IPM U V CT N Ic VinU GNDU Vcc 20k VinX SW2 Figure 6. Switching Characteristics Test Circuit AC200V AC400V + Icc A Vcc P IPM Vin P.G +8V fsw GND N V W U DC 15V W 4700p GND N Noise DC 15V Earth Cooling Fin Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 6MBP50TEA120 Block diagram P VccU VinU AL MU GNDU Vcc V VinV AL MV GNDV VccW VinW AL MW GNDW Vcc VinX 4 3 2 IGBT-IPM Pre- Driver R ALM 1.5k 1 Vz U 8 7 6 Pre- Driver R ALM 1.5k 5 Vz V 12 11 10 Pre- Driver R ALM 1.5k 9 Vz W 14 16 Pre- Driver Vz GND 13 VinY 17 Pre- Driver Vz Pre-drivers include following functions 1.Amplifier for driver Pre- Driver VinZ 18 Vz 2.Short circuit protection 3.Under voltage lockout circuit NC B 4.Over current protection 5.IGBT chip over heating protection VinDB AL M 15 19 NC R ALM 1.5k N Outline drawings, mm Package type : P622 Dimensions in mm M BCFM Mass : 270g 6MBP50TEA120 Characteristics Control circuit characteristics (Representative) IGBT-IPM Power supply current vs. Switching frequency Tc=125C (typ.) 50 Power supply current : Icc (mA) Input signal threshold voltage : Vin(on),Vin(off) (V) P-side N-side Vcc=17V Vcc=15V Vcc=13V Input signal threshold voltage vs. Power supply voltage (typ.) 2.5 Tj=25C Tj=125C 40 2 } Vin(off) 1.5 30 } Vin(on) 20 Vcc=17V Vcc=15V Vcc=13V 1 10 0.5 0 0 5 10 15 20 Switching frequency : fsw (kHz) 25 0 12 13 14 15 16 17 Power supply voltage : Vcc (V) 18 Under voltage vs. Junction temperature (typ.) 14 12 10 8 6 4 2 0 20 Under voltage hysterisis : VH (V) 40 60 80 100 120 140 Under voltage hysterisis vs. Jnction temperature (typ.) 1 Under voltage : VUVT (V) 0.8 0.6 0.4 0.2 0 20 Junction temperature : Tj (C) 40 60 80 100 120 Junction temperature : Tj (C) 140 Alarm hold time vs. Power supply voltage (typ.) 3 Over heating protection : TjOH (C) OH hysterisis : TjH (C) Alarm hold time : tALM (mSec) 2.5 Tc=100C 2 1.5 1 0.5 0 12 Tc=25C 200 Over heating characteristics TjOH,TjH vs. Vcc (typ.) TjOH 150 100 50 TjH 0 12 13 14 15 16 17 18 Power supply voltage : Vcc (V) 13 14 15 16 17 Power supply voltage : Vcc (V) 18 6MBP50TEA120 Main circuit characteristics (Representative) IGBT-IPM Collector current vs. Collector-Emitter voltage (typ.) Tj=25C / Chip 100 Collector current vs. Collector-Emitter voltage (typ.) Tj=25C / Terminal 100 Collector Current : Ic (A) Collector Current : Ic (A) 80 Vcc=17V Vcc=15V 80 Vcc=15V 60 60 Vcc=17V Vcc=13V Vcc=13V 40 40 20 20 0 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) 3.5 0 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) 3.5 Collector current vs. Collector-Emitter voltage (typ.) Tj=125C / Chip 100 Collector Current : Ic (A) Collector current vs. Collector-Emitter voltage (typ.) Tj=125C / Terminal 100 Collector Current : Ic (A) 80 Vcc=17V Vcc=15V 80 Vcc=17V Vcc=15V 60 60 Vcc=13V Vcc=13V 40 40 20 20 0 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) 0 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) 3.5 Forward current vs. Forward voltage (typ.) Chip 100 Forward current vs. Forward voltage (typ.) Terminal 100 Forward Current : If (A) 25C 60 125C Forward Current : If (A) 80 80 25C 60 125C 40 40 20 20 0 0 0.5 1 1.5 2 2.5 Forward voltage : Vf (V) 0 0 0.5 1 1.5 2 2.5 Forward voltage : Vf (V) 6MBP50TEA120 IGBT-IPM Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=25 C Switching loss : Eon,Eoff,Err (mJ/cycle) Switching loss : Eon,Eoff,Err (mJ/cycle) 20 Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=125C 20 Eon 15 15 Eon 10 10 5 Eoff Err Eoff 5 Err 0 0 0 20 40 60 80 100 0 20 40 60 80 100 Collector current : Ic (A) R e ve rs ed bias ed sa fe ope ra ting a re a Vc c=1 5V, Tj<= 125 C (m in .) 70 0 Collector current : Ic (A) Transient therm al resistance (m ax.) 1 60 0 Thermal resistance : Rth(j-c) (C/W ) FW D 50 0 IG BT C ollecto r curre nt : Ic (A) 40 0 0.1 30 0 SC SO A (non-repe titive puls e) 20 0 10 0 R BSO A (R epe titive puls e) 0 0 20 0 400 60 0 800 1 00 0 1200 140 0 0.01 0.0 01 0.01 0.1 1 Colle ctor- Emitter voltage : V ce (V) Pulse w idth :Pw (sec) Power derating for IG BT (m ax.) (per dev ice) 500 200 Power derating for FW D (max.) (per dev ice) Collecter Power Dissipation : Pc (W ) Collecter Power Dissipation : Pc (W ) 400 150 300 100 200 50 100 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Case Tem perature : Tc (C) Case Tem perature : Tc (C) 6MBP50TEA120 IGBT-IPM Switching tim e vs. Collector current (typ.) Edc=600V,Vcc=15V,Tj=25C 10000 Switching tim e vs. Collector current (typ.) Edc=600V,Vcc=15V,Tj= 125 C 10000 Switching time : ton,toff,tf (nSec ) Switching time : ton,toff,tf (nSec ) toff toff 1000 ton 1000 ton tf 100 100 tf 10 0 10 20 30 40 50 60 Collector current : Ic (A) 70 80 10 0 10 20 30 40 50 60 70 80 Collector current : Ic (A) Reverse recovery characteristics trr,Irr vs.IF (typ.) trr125C Reverse recovery current:Irr(A) Reverse recovery time:trr(nsec) trr25C 100 Irr125C Irr25C 10 1 0 10 20 30 40 50 60 Forward current:IF(A) 70 80 |
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